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NCV8163AMX120TBG onsemi

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NCV8163AMX120TBG onsemi

Here is the English information on the NCV8163AMX120TBG chip:

  • Breakdown Voltage: 12V
  • On-Resistance: 1.2 mΩ (typ)
  • Continuous Drain Current: 8.163A
  • Fast Switching Speeds
  • PowerPAK SO-8 Package

The NCV8163AMX120TBG is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching of currents up to 8.163A
  • Extremely low on-resistance minimizes conduction losses
  • Fast switching improves conversion efficiency at high frequencies
  • PowerPAK SO-8 package provides strong thermal dissipation

Common Applications:

  • Point-of-load DC/DC converters below 8.163A load
  • Motor drivers and controllers under 8.163A load
  • Industrial power supplies requiring high current switching

Benefits include the ability to switch up to 8.163A with very low resistance and losses. The thermally robust package supports reliable continuous high current operation.

Well-suited for applications requiring precise switching of currents around 8A where heat dissipation is critical.

In summary, the NCV8163AMX120TBG offers extremely low resistance switching of up to 8.163A in a thermally capable package.

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